600V IGBT Module 2MG150N06TCH
产品简介
Our IGBT Module which is 600V/1200V/1700V,The current is 75A/100A/150A/200A/300A/400A/600A,600V IGBT Module
产品详细信息
An IGBT has a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the doping must decrease, resulting in roughly square relationship decrease in forward conduction vs. blocking voltage capability of the device. By injecting minority carriers (holes) from the collector p+ region into the n- drift region during forward conduction, the resistance of the n- drift region is considerably reduced. However, this resultant reduction in on-state forward voltage comes with several penalties:
(1200V IGBT Dual Module)
2MG75B12STD (75A/1200V IGBT Module)
2MG100B12STD (100A/1200V IGBT Module)
2MG150B12STD (150A/1200V IGBT Module)
2MG200B12STD (200A/1200V IGBT Module)
2MG300B12STD (300A/1200V IGBT Module)
2MG400B12STD (400A/1200V IGBT Module)
(600V IGBT Dual Module)
2MG150N06TCH (150A/600V IGBT Module)
2MG200N06TCH (200A/600V IGBT Module)
2MG300N06TCH (300A/600V IGBT Module)
2MG400N06TCH (400A/600V IGBT Module)
2MG600N06TCH (600A/600V Module)
(1200V IGBT Dual Module)
2MG75B12STD (75A/1200V IGBT Module)
2MG100B12STD (100A/1200V IGBT Module)
2MG150B12STD (150A/1200V IGBT Module)
2MG200B12STD (200A/1200V IGBT Module)
2MG300B12STD (300A/1200V IGBT Module)
2MG400B12STD (400A/1200V IGBT Module)
(600V IGBT Dual Module)
2MG150N06TCH (150A/600V IGBT Module)
2MG200N06TCH (200A/600V IGBT Module)
2MG300N06TCH (300A/600V IGBT Module)
2MG400N06TCH (400A/600V IGBT Module)
2MG600N06TCH (600A/600V Module)