300A IGBT Module 2MG300B12STD

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产品价格： < 面议

产品型号：2MG300B12STD

品牌：其它品牌

公司名称：常州杜安进出口有限公司

所在地：江苏常州

浏览次数：1155 次

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产品简介

2MG300B12STD it is 300A IGBT Module with VCES=1200V

产品详细信息

(1200V IGBT Dual Module)
2MG75B12STD (75A/1200V IGBT Module)
2MG100B12STD (100A/1200V IGBT Module)
2MG150B12STD (150A/1200V IGBT Module)
2MG200B12STD (200A/1200V IGBT Module)
2MG300B12STD (300A/1200V IGBT Module)
2MG400B12STD (400A/1200V IGBT Module)
(600V IGBT Dual Module)
2MG150N06TCH (150A/600V IGBT Module)
2MG200N06TCH (200A/600V IGBT Module)
2MG300N06TCH (300A/600V IGBT Module)
2MG400N06TCH (400A/600V IGBT Module)
2MG600N06TCH (600A/600V IGBT Module)
An IGBT has a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the doping must decrease, resulting in roughly square relationship decrease in forward conduction vs. blocking voltage capability of the device. By injecting minority carriers (holes) from the collector p+ region into the n- drift region during forward conduction, the resistance of the n- drift region is considerably reduced. However, this resultant reduction in on-state forward voltage comes with several penalties:300A IGBT Module300A IGBT Module